e-5 - -,--5 3 * .-- = --- - = = -a== =- - - an amp company rf mosfet power transistor, ioow, 28v 100 - 500 mhz uf281 oov features l n-channel enhancement &lode device l dmos structure l lower capacitances for broadband operation l high saturated output power l lower noise figure than competitive devices absolute maximum ratings at 25c i parameter ( symbol 1 rating ( units drain-source voltage gate-source voltage drain-source current power dissipation junctiontemperature storage temperature thermal resistance v ds 65 v v gs 20 v ?ds 12 a pd 250 w tj 200 ?c t sic -55 to +150 ?c 8 ip 0.7 ?crw electrical characteristics at 25c v2.00 _____.._~~ parameter drain-source breakdown voltage drain-source leakagecurrent gate-source leakage current symbol min max units lest conditions bv,,, 65 - v v,.=o.o v. i& 5.0 ma i dss 3.0 ma v,,=28.0 v, v,,=o.o v? , , ?gss ) 3.0 ] fl 1 v,,=2ov, vds=o.o v i i gate threshold voltage v gsiw 2.0 6.0 v v,,=lo.o v, 1,,=300.0 ma? forwardtransconductance gm 1.5 - s v,,=10.0 v, 1,,=3000.0 ma, av,,=l .o v, 80 us pulse? input capacitance c - 15s 135 pf v,,=28.0 v, f=l .o mhz? output capacitance c ass 90 pf v,,=28.0 v, f=l .o mhz? reverse capacitance c rss 24 pf v,,=28.0 v, f=l .o mhz? power gain gp 10 - db v,,=28.0 v, 1,,=600.0 ma, p,,$oo.o w, f=soo mhz drain efficiency 50 - % v,,=28.0 v, 1,,=600.0 ma, p,,,=loo.o w. f=500 mhz . load mismatch tolerance vswr-t - 3o:l - v,,=28.0 v, ldd=800.0 ma, pbbyloo.0 w, f=500 mhz - per side specifications subject to change wiihout notice. m/a-com, inc. nofth america: tel. (800) 366-2266 m asia/pacific: tel. +81 (03) 3226-1671 n europe: tel. +44 (1344) 869 595 fax (800) 618-8883 fax +81 (03) 3226-1451 fax +44 (1344) 300 020
rf mosfet power transistor, loow, 28v uf281 oov v2.00 typical broadband performance curves efficiency vs frequency 80 p,,=lo w i,,=600 ma (push-pull device) power output vs supply voltage 120 p&o w i,,=600 ma f&o0 mhz loo 0 100 200 300 400 500 14 16 20 24 26 22 frequency (mhz) supply voltage(v) power output vs power input v,,=28 v i,,=600 ma (push-pull device) 2 4 6 8 10 12 power input(w) specifications subject to change without notice. m/a-com, inc. north america: tel. (800) 366-2266 w asia/pacific: tel. +81 (03) 3226-1671 n europe: tel. +44 (1344) 869 595 fax (800) 618-8883 fax +81 (03) 3226-1451 fax +44 (1344) 300 020
rf mosfet power transistor, ioow, 28v uf281 oov v2.00 typical device impedance frequency (mhz) 100 300 500 7 5, (ohms) z,,,, (ohms) 4.5 - j 6.0 14.5+j 0.5 2.25 - j 1.75 7.5 + j 1 .o 1.5 + j 5.5 3.5 - j 3.5 ,i v,,=28 v, i,,=690 ma, p,,,=loo.o watts z,, is the series equivalent input impedance of the device from gate to gate. z load is.tqe optimum series equivalent load impedance as measured from drain to drain. rf test fixture 0 0 0 cl.c6 c2.q c4 c5 c6.c7 c%clo cl1 cl2 rl .r4 rum ll k tl 72 t3 14 91 board jlj2 j3j4js heatsink parts lls.1 chlp capacitor. 2.opf atc b chip capacitor. 5oocpf chip capac~of!. 37pf atc b chip capacitor. 25opf atc b chip capacttor. .015uf chip capacttor. 5kvf atc b chip capacltor. o.bpf atc b electroltllc capacitcr, 5ouf 50 volts resistor. 27 ohm 25 wa-i-f resistor 22k ohm 25 watt inductor. 5 turns of no. 18 awg on ?.lo inductor. 10 turns of nc. 22 awg on r4 ,:, balun transformer 50 0?m semi-rigid coax ?.obs x 3? long ,:i balun transformer. 25 c+im semi-rigid coax ?.070? x 2.5? long 13 balun transformer. 10 ohm semi-rigig coax ?.070.x 2.5? long ,:, balun transformer. 50 ohm semi-rigid coax ?.ow x 4? long uf261oov rogers 5870. .ml?lliick connector type-n banana jack finned aluminum, din 7305olb2-03 specifications subject to change without notice. wa-com, inc. 9-295 north america: tel. (800) 366-2266 m asia/pacific: tel. +81 (03) 3226-1671 n europe: tel. +44 (1344) 869 595 fax (800) 618-8883 fax +81 (03) 3226-1451 fax +44 (1344) 300 020
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